* AlGaN/GaN-based Triple-Gate MISFETs
the NDSL Web
Our main research interests are:
(a) RF modeling for CMOS device;
(b) 3-dimensional device simulations;
(c) Increase of internal/external quantum efficiency and output power at LEDs.
(d) Circuit simulation for verifying characteristics of device by a mixed mode.
School of Electronics Engineering, Kyungpook National University
1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
Lab: IT-3 building. 305
* AlGaN/GaN-based Triple-Gate MISFETs
* Narrow channel Tunneling FET
* Fabrication of MOSFETs
* Fabrication of LEDs
1. Low Power Device
2. High Power Device
3. LEDs
GaN-based Power Device
-Simulation & Circuit Implementation
1) Tunneling FET 2) Junctionless transistor
-Simulation & small signal RF Modeling
